Vishay Precision Group 100V 190A MOSFET Transistor VS-FB190SA10

MOSFET N-CH 100V 190A SOT227 Product overview: VS-FB190SA10 from Vishay General Semiconductor – Diodes Division is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 190A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 190A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VS-FB190SA10 can be used for catalog matching and distributor lookup.

N-Channel 100V 190A (Tj) 568W (Tc) Chassis Mount SOT-227

Manufacturer: Vishay Semiconductor Diodes Division
Win Source Part Number: 1279868-VS-FB190SA10
Packaging: Tube
Mounting Style: Chassis Mount
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.vishay.com
Manufacturer Package: SOT-227-4, miniBLOC
Power Dissipation (Maximum): 568W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 10
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 190A
Rds On (Maximum) at Id, Vgs: 6.5mOhm at 180A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.35V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 250nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 10700pF at 25V