MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:460mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:1.3W; MSL:- RoHS Compliant: No
MOSFET N-CH 60V 0.4A TO-205
MOSFET N-CH 60V 0.4A TO-205
| Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 13C1946 | VQ1004P | VQ1004P |
| Product Name | Mosfet; Channel Type Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| IDSS | 460 milliamps | 830 milliamps |
