Vishay Precision Group Mosfet, 60V, 830Ma. Dip; Channel Type Vishay VQ1000P-E3

Description
MOSFET, 60V, 830mA. DIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:830mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; No. of Pins:14Pins RoHS Compliant: Yes
Datasheet
Description
MOSFET, 60V, 830mA. DIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:830mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; No. of Pins:14Pins RoHS Compliant: Yes
Datasheet

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Mosfet, 60V, 830Ma. Dip; Channel Type Vishay - 06J8715 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, 60V, 830Ma. Dip; Channel Type Vishay
06J8715
Mosfet, 60V, 830Ma. Dip; Channel Type Vishay 06J8715
MOSFET, 60V, 830mA. DIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:830mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; No. of Pins:14Pins RoHS Compliant: Yes

MOSFET, 60V, 830mA. DIP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:830mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; No. of Pins:14Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 60V 0.225A

MOSFET N-CH 60V 0.225A

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Technical Specifications

  Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 06J8715 VQ1000P-E3
Product Name Mosfet, 60V, 830Ma. Dip; Channel Type Vishay MOSFET
IDSS 830 milliamps
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