P-Channel 80V 880mA (Ta) 6.25W (Ta) Through Hole TO-39
Manufacturer: Vishay
Win Source Part Number: 145076-VP0808B
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 6.25W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-39
Dimension: TO-205AD, TO-39-3 Metal Can
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 880mA (Ta)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Input Capacitance: 150pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET P-CH 80V 880MA TO39 Product overview: VP0808B from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 880MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 880MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP0808B can be used for catalog matching and distributor lookup.
MOSFET P-CH 80V 880MA TO39
P-CHANNEL MOSFET TRANSISTOR, TO-92; Channel Type:-; Drain Source Voltage Vds:-; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:-; Power Dissipation:6.25W RoHS Compliant: No
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | VP0808B-ND | 145076-VP0808B | 278-VP0808B | VP0808B | 13C1933 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP0808B | 80V 880MA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P-Channel Mosfet Transistor, To-92; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | TO-3; TO-39; TO-205AD, TO-39-3 Metal Can | TO-3; TO-39; SOT3; TO-39 | Tube | TO-39; TO-205AD, TO-39-3 Metal Can | TO-3; TO-92 |
| V(BR)DSS | 80 volts | ||||
| PD | 6250 milliwatts | 6250 milliwatts | 6250 milliwatts |
