940 nm 100 mA ±17° Through Hole High Power Infrared Emitting Diode - T-1 3/4
INFRARED EMITTER 940NM T-1 3/4; Peak Wavelength:940nm; Angle of Half Intensity:17°; Diode Case Style:T-1 3/4 (5mm); Radiant Intensity (Ie):15mW/Sr; Rise Time:15ns; Fall Time tf:15ns; Forward Current If(AV):100mA; Forward Voltage VF RoHS Compliant: Yes
IR EMITTER, 940NM, T-1 3/4, THROUGH HOLE; Viewing Angle:17°; Diode Case Style:Radial Leaded; Forward Current If(AV):100mA; Forward Voltage VF Max:3V; Rise Time:800ns; Fall Time tf:800ns; Operating Temperature Min:-40°C; MSL:- RoHS Compliant: Yes
| Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Diodes | Diodes | Diodes |
| Product Number | 866-TSAL6200 | 78Y9605 | 95B4858 |
| Product Name | 940 nm 100 mA ±17° Through Hole High Power Infrared Emitting Diode - T-1 3/4 | Infrared Emitter 940Nm T-1 3/4; Peak Wavelength Vishay | Ir Emitter, 940Nm, T-1 3/4, Through Hole; Viewing Angle Vishay |
| RoHS Compliant | RoHS | RoHS |
