Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP85N02-03 SUP85N02-03

Description
Manufacturer: Vishay Win Source Part Number: 042964-SUP85N02-03 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 85A (Tc) Gate-Source Threshold Voltage: 450mV @ 2mA (Min) Max Gate Charge: 200nC @ 4.5V Max Input Capacitance: 21250pF @ 20V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 3 mOhm @ 30A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 042964-SUP85N02-03 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 85A (Tc) Gate-Source Threshold Voltage: 450mV @ 2mA (Min) Max Gate Charge: 200nC @ 4.5V Max Input Capacitance: 21250pF @ 20V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 3 mOhm @ 30A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP85N02-03 - 042964-SUP85N02-03 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP85N02-03
042964-SUP85N02-03
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP85N02-03 042964-SUP85N02-03
Manufacturer: Vishay Win Source Part Number: 042964-SUP85N02-03 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 85A (Tc) Gate-Source Threshold Voltage: 450mV @ 2mA (Min) Max Gate Charge: 200nC @ 4.5V Max Input Capacitance: 21250pF @ 20V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 3 mOhm @ 30A, 4.5V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 042964-SUP85N02-03
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 85A (Tc)
Gate-Source Threshold Voltage: 450mV @ 2mA (Min)
Max Gate Charge: 200nC @ 4.5V
Max Input Capacitance: 21250pF @ 20V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 3 mOhm @ 30A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 042964-SUP85N02-03
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUP85N02-03
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 250000 milliwatts
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