N-Channel 200V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Trans MOSFET N-CH 200V 150A 3-Pin(2+Tab) D2PAK Bulk Product overview: SUM90100E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 150A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 150A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM90100E-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1352496-SUM90100E-GE
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 35 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: TrenchFET®
Package: Bulk
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3930 pF @ 100 V
Power Dissipation (Max): 375W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99
N-CHANNEL 200-V (D-S) MOSFET D2P
MOSFET, N-CH, 200V, 150A, 175DEG C, 375W ROHS COMPLIANT: YES
N-CHANNEL 200-V (D-S) MOSFET D2P
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-SUM90100E-GE3-ND | 278-SUM90100E-GE3 | 2282987 | 1352496-SUM90100E-GE3 | SUM90100E-GE3 | 50AJ6136 | SUM90100E-GE3 |
| Product Name | Single FETs, MOSFETs | 200V 150A MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 150A, 175Deg C, 375W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | TO-263; TO-263 | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| PD | 375000 milliwatts | 375000 milliwatts | 375000 milliwatts |
