MOSFET N-CH 100V 150A TO263
Power Field-Effect Transistor, Product overview: SUM70030E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUM70030E-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 962243-SUM70030E-GE3
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): CSD19536KTT;
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SUM70030E-GE3-ND,SUM
Base Product Number: SUM70030
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
N-Channel 100V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
MOSFET, 100V, 150A, 175DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 100V 150A TO263
MOSFET 100V Vds; 20V Vgs TO-263
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUM70030E-GE3 | 278-SUM70030E-GE3 | 962243-SUM70030E-GE3 | SUM70030E-GE3DKR-ND | 99AC9660 | SUM70030E-GE3 | SUM70030E-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, 100V, 150A, 175Deg C; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | ||||||
| IDSS | 150000 milliamps | 150000 milliamps | |||||
| PD | 375000 milliwatts | 375000 milliwatts |
