MOSFET N-CH 200V 65A TO263
Manufacturer: Vishay
Win Source Part Number: 031623-SUM65N20-30-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Family Name: SUM65N20-30
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): EPC1010; EPC2010; OM6051SJP; IRFS38N20DTRLPBF; STB80N20M5; IRFS4227; SUM90140E-GE3; SUM65N20-30-E3;
Introduction Date: October 16, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
N-Channel 200V 65A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 200V 65A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 200V 65A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
N CHANNEL MOSFET, 200V, 65A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET 200V 65A 375W 30mohm @ 10V
MOSFET N-CH 200V 65A TO263
| ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SUM65N20-30-E3 | 8187489P | 031623-SUM65N20-30-E3 | SUM65N20-30-E3CT-ND | 06J8530 | SUM65N20-30-E3 | SUM65N20-30-E3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM65N20-30-E3 | Single FETs, MOSFETs | N Channel Mosfet, 200V, 65A, To-263; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||
| IDSS | 65000 milliamps | 65000 milliamps | 65000 milliamps | ||||
| PD | 3750 milliwatts | 3750 to 375000 milliwatts |
