Vishay Intertechnology, Inc. MOSFET SUM60N04-06T-E3

N-channel 40-V MOSFET with a sensing diode in a D2PAK-5L package, rated for 60 A continuous drain current and a maximum junction temperature of 175 °C. The on-state resistance is 0.0055 Ω at 10 V gate-source voltage and 25 A drain current. It features a repetitive avalanche energy of 180 mJ and a thermal resistance from junction to case of 0.75 °C/W. RoHS compliant.