Win Source Part Number: 1277489-SUM50010E-GE
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tube
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SUM50010
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET N-CH 60V 150A TO263
N-Channel 60V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
MOSFET N-CH 60V 150A TO263
MOSFET 60V Vds; 20V Vgs TO-263
MOSFET, N-CH, 150A, 60V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 150A TO263
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277489-SUM50010E-GE3 | 742-SUM50010E-GE3DKR-ND | SUM50010E-GE3 | 54AH9658 | SUM50010E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 150A, 60V, To-263; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
