MOSFET P-CH 80V 110A TO263
Manufacturer: Vishay
Win Source Part Number: 1104114-SUM110P08-11
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Family Name: SUM110P08-11L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 10850pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.2 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IXTA96P085T;
Introduction Date: December 02, 2005
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
P-Channel 80V 110A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 80V 110A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
P-Channel 80V 110A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
N-Ch MOSFET D2Pak 80V 11.5mohm @ 10V
N-Ch MOSFET D2Pak 80V 11.5mohm @ 10V
N-Ch MOSFET D2Pak 80V 11.5mohm @ 10V
MOSFET P-CH 80V 110A TO263
P CHANNEL MOSFET, -80V, 11A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, P CHANNEL, -80V, -110A, TO-263-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:110A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:375W RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SUM110P08-11L-E3 | 1104114-SUM110P08-11L-E3 | SUM110P08-11L-E3CT-ND | 1807977P | SUM110P08-11L-E3 | 75M5649 | 29X0566 | SUM110P08-11L-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUM110P08-11L-E3 | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -80V, 11A, To-263; Channel Type Vishay | Mosfet, P Channel, -80V, -110A, To-263-3, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| IDSS | 110000 milliamps | 110000 milliamps | 110000 milliamps |
