Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P04-09L-E3 SUD50P04-09L-E3

Description
Manufacturer: Vishay Win Source Part Number: 101981-SUD50P04-09L- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Family Name: SUD50P04-09L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.4 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): NP50P04SDG-E2-AY; IPD50P04P4L11XT ; NP50P04SDG-E1-AY; DMP4015SK3Q-13; Introduction Date: June 13, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 101981-SUD50P04-09L- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Family Name: SUD50P04-09L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.4 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): NP50P04SDG-E2-AY; IPD50P04P4L11XT ; NP50P04SDG-E1-AY; DMP4015SK3Q-13; Introduction Date: June 13, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P04-09L-E3 - 101981-SUD50P04-09L-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P04-09L-E3
101981-SUD50P04-09L-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P04-09L-E3 101981-SUD50P04-09L-E3
Manufacturer: Vishay Win Source Part Number: 101981-SUD50P04-09L- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3W (Ta), 136W (Tc) Family Name: SUD50P04-09L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.4 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): NP50P04SDG-E2-AY; IPD50P04P4L11XT ; NP50P04SDG-E1-AY; DMP4015SK3Q-13; Introduction Date: June 13, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 101981-SUD50P04-09L-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Family Name: SUD50P04-09L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.4 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): NP50P04SDG-E2-AY; IPD50P04P4L11XT ; NP50P04SDG-E1-AY; DMP4015SK3Q-13;
Introduction Date: June 13, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SUD50P04-09L-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD50P04-09L-E3CT-ND
Single FETs, MOSFETs SUD50P04-09L-E3CT-ND
P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD50P04-09L-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD50P04-09L-E3TR-ND
Single FETs, MOSFETs SUD50P04-09L-E3TR-ND
P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD50P04-09L-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SUD50P04-09L-E3DKR-ND
Single FETs, MOSFETs SUD50P04-09L-E3DKR-ND
P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SUD50P04-09L-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SUD50P04-09L-E3
Single FETs, MOSFETs SUD50P04-09L-E3
MOSFET P-CH 40V 50A TO252

MOSFET P-CH 40V 50A TO252

Supplier's Site Datasheet
Mosfet, P Channel, -40V, -50A, To-252-3; Channel Type Vishay - 06J8477 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -40V, -50A, To-252-3; Channel Type Vishay
06J8477
Mosfet, P Channel, -40V, -50A, To-252-3; Channel Type Vishay 06J8477
MOSFET, P CHANNEL, -40V, -50A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, P CHANNEL, -40V, -50A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -40V, -50A, To-252-3, Full Reel; Channel Type Vishay - 29X0563 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -40V, -50A, To-252-3, Full Reel; Channel Type Vishay
29X0563
Mosfet, P Channel, -40V, -50A, To-252-3, Full Reel; Channel Type Vishay 29X0563
MOSFET, P CHANNEL, -40V, -50A, TO-252-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:136W RoHS Compliant: Yes

MOSFET, P CHANNEL, -40V, -50A, TO-252-3, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:136W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD50P04-09L-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD50P04-09L-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD50P04-09L-E3
MOSFET P-CH 40V 50A TO252

MOSFET P-CH 40V 50A TO252

Supplier's Site
Fort Worth, TX, USA
P-CHANNEL 40-V (D-S), 175C MOSFET
70026312
P-CHANNEL 40-V (D-S), 175C MOSFET 70026312
P-CHANNEL 40-V (D-S), 175C MOSFET

P-CHANNEL 40-V (D-S), 175C MOSFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V 50A 136W 9.4mohm @ 10V

MOSFET 40V 50A 136W 9.4mohm @ 10V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 101981-SUD50P04-09L-E3 SUD50P04-09L-E3CT-ND SUD50P04-09L-E3 06J8477 29X0563 SUD50P04-09L-E3 70026312 SUD50P04-09L-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD50P04-09L-E3 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, P Channel, -40V, -50A, To-252-3; Channel Type Vishay Mosfet, P Channel, -40V, -50A, To-252-3, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs P-CHANNEL 40-V (D-S), 175C MOSFET MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 40 volts 40 volts
PD 3000 to 136000 milliwatts 3000 milliwatts 136000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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