N-Channel 200V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
N-Channel 200V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
N-Channel 200V 19A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
Manufacturer: Vishay
Win Source Part Number: 031607-SUD19N20-90-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Family Name: SUD19N20-90
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): STD25NF20; TSM19N20CPROG; PHD22NQ20TT/R;
Introduction Date: February 25, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 19A TO252
N CHANNEL MOSFET, 200V, 19A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:3W; RoHS Compliant: Yes
MOSFET N-CH 200-V (D-S) 175C DEG
MOSFET N-CH 200V 19A TO252
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SUD19N20-90-E3CT-ND | 031607-SUD19N20-90-E3 | SUD19N20-90-E3 | 06J8437 | 62M0212 | SUD19N20-90-E3 | SUD19N20-90-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD19N20-90-E3 | Single FETs, MOSFETs | N Channel Mosfet, 200V, 19A, To-252; Channel Type Vishay | Mosfet, N, To-252; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); TO-252, (D-Pak) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| V(BR)DSS | 200 volts | 200 volts | |||||
| PD | 3000 to 136000 milliwatts | 3000 milliwatts | 3000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
