Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-T4E3 SUD08P06-155L-T4E3

Description
Manufacturer: Vishay Win Source Part Number: 1104082-SUD08P06-155 L-T4E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8.4A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1104082-SUD08P06-155 L-T4E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8.4A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-T4E3 - 1104082-SUD08P06-155L-T4E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-T4E3
1104082-SUD08P06-155L-T4E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-T4E3 1104082-SUD08P06-155L-T4E3
Manufacturer: Vishay Win Source Part Number: 1104082-SUD08P06-155 L-T4E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 8.4A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1104082-SUD08P06-155L-T4E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now
Singapore
60V 8.4A TO252 MOSFET Transistor
278-SUD08P06-155L-T4E3
60V 8.4A TO252 MOSFET Transistor 278-SUD08P06-155L-T4E3
MOSFET P-CH 60V 8.4A TO252 Product overview: SUD08P06-155L-T4E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8.4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD08P06-155L-T4 E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 8.4A TO252 Product overview: SUD08P06-155L-T4E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 8.4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 8.4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD08P06-155L-T4E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUD08P06-155L-T4E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUD08P06-155L-T4E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUD08P06-155L-T4E3
MOSFET P-CH 60V 8.4A TO252

MOSFET P-CH 60V 8.4A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1104082-SUD08P06-155L-T4E3 278-SUD08P06-155L-T4E3 SUD08P06-155L-T4E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-T4E3 60V 8.4A TO252 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 60 volts
PD 1700 to 20800 milliwatts 1700 milliwatts
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