P-Channel MOSFET, 60V, 8.4A, 155mR, TO-252, Surface Mount Product overview: SUD08P06-155L-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 60V, 8.4A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 8.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SUD08P06-155L-GE
Manufacturer: Vishay
Win Source Part Number: 1104081-SUD08P06-155
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 8.4A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 155 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
P-Ch MOSFET DPak (TO-252) 60V 155mohm @
P-Ch MOSFET DPak (TO-252) 60V 155mohm @
P-Ch MOSFET DPak (TO-252) 60V 155mohm @
P-Channel 60V 8.4A (Tc) 1.7W (Ta), 20.8W (Tc) Surface Mount TO-252
P-Channel 60V 8.4A (Tc) 1.7W (Ta), 20.8W (Tc) Surface Mount TO-252
P-Channel 60V 8.4A (Tc) 1.7W (Ta), 20.8W (Tc) Surface Mount TO-252
MOSFET, P-CH, 60V, 8.2A, 150DEG C, 20.8W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET P-CH 60V 8.4A TO252
MOSFET -30V 0.155ohm@-10V -8.4A P-CH
MOSFET P-CH 60V 8.4A TO252
60V 8.4A 155mΩ@5A,10V 3V@250uA P Channel TO-252 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SUD08P06-155L-GE3 | 1104081-SUD08P06-155L-GE3 | 1807411 | SUD08P06-155L-GE3CT-ND | 01AC5033 | SUD08P06-155L-GE3 | SUD08P06-155L-GE3 | SUD08P06-155L-GE3 | SUD08P06-155L-GE3 |
| Product Name | P-Channel SMD 60V 8.4A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SUD08P06-155L-GE3 | IGBTs | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 8.2A, 150Deg C, 20.8W; Channel Type Vishay | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| PD | 20800 milliwatts | 1700 to 20800 milliwatts | 1700 milliwatts | 1700 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| Package Type | SOT3; TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | TO-252 (DPAK) |
