Vishay Intertechnology, Inc. FETs - Single - SUA70090E-E3 SUA70090E-E3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 809508-SUA70090E-E3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 35.7W (Tc) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 9.3mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 50V Current - Continuous Drain (Id) at 25°C: 42.8A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 809508-SUA70090E-E3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 35.7W (Tc) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 9.3mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 50V Current - Continuous Drain (Id) at 25°C: 42.8A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V
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Suppliers

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Product
Description
Supplier Links
FETs - Single - SUA70090E-E3 - 809508-SUA70090E-E3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SUA70090E-E3
809508-SUA70090E-E3
FETs - Single - SUA70090E-E3 809508-SUA70090E-E3
Manufacturer: Vishay Siliconix Win Source Part Number: 809508-SUA70090E-E3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 35.7W (Tc) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 9.3mOhm at 20A, 10V Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 50V Current - Continuous Drain (Id) at 25°C: 42.8A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Maximum Vgs: ±20V

Manufacturer: Vishay Siliconix
Win Source Part Number: 809508-SUA70090E-E3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 35.7W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.3mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1950pF at 50V
Current - Continuous Drain (Id) at 25°C: 42.8A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V

Buy Now
Single FETs, MOSFETs - SUA70090E-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
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Single FETs, MOSFETs SUA70090E-E3-ND
N-Channel 100V 42.8A (Tc) 35.7W (Tc) Through Hole TO-220 Full Pack

N-Channel 100V 42.8A (Tc) 35.7W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
MOSFET N-CH 100V 42.8A TO220 FPK - 880-SUA70090E-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 42.8A TO220 FPK
880-SUA70090E-E3
MOSFET N-CH 100V 42.8A TO220 FPK 880-SUA70090E-E3
MOSFET N-CH 100V 42.8A TO220 FPK

MOSFET N-CH 100V 42.8A TO220 FPK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SUA70090E-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SUA70090E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SUA70090E-E3
MOSFET N-CH 100V 42.8A TO220

MOSFET N-CH 100V 42.8A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 809508-SUA70090E-E3 SUA70090E-E3-ND 880-SUA70090E-E3 SUA70090E-E3
Product Name FETs - Single - SUA70090E-E3 Single FETs, MOSFETs MOSFET N-CH 100V 42.8A TO220 FPK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 35700 milliwatts 35700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack Through Hole
Packing Method Tube; Tube Tube; Tube Tube; Tube
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