Vishay Intertechnology, Inc. Single FETs, MOSFETs SQS462ENW-T1_GE3

The SQS462ENW is an automotive-grade N-channel MOSFET rated for 60 V drain-source voltage and 175 °C junction temperature, designed for high-reliability applications. It is packaged in a PowerPAK 1212-8W leadless case with wettable flank terminals for automated optical inspection. The device has a drain-source on-resistance of 0.063 Ω at 10 V gate-source voltage and 0.082 Ω at 4.5 V, with a continuous drain current of 8 A. It is AEC-Q101 qualified, 100% Rg and UIS tested, and has a junction-to-case thermal resistance of 4.5 °C/W and junction-to-ambient thermal resistance of 81 °C/W when mounted on a 1" square FR4 PCB. The maximum power dissipation is 33 W at 25 °C and 11 W at 125 °C.