Power Field-Effect Transistor, Product overview: SQM70060EL_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM70060EL_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1095816-SQM70060EL_G
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 166W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQM70060EL_GE3SQM700
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQM70060EL_GE3DKR,SQ
Base Product Number: SQM70060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 100V 75A D2PAK
N-Channel 100V 75A (Tc) 166W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 75A (Tc) 166W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 100V 75A (Tc) 166W (Tc) Surface Mount TO-263 (D²Pak)
100V 75A 166W 5.9mΩ@30A,10V 2.5V@250uA null TO-263(D2PAk) MOSFETs ROHS
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
MOSFET N-CH 100V 75A D2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SQM70060EL_GE3 | 1095816-SQM70060EL_GE3 | SQM70060EL_GE3 | SQM70060EL_GE3TR-ND | SQM70060EL_GE3 | SQM70060EL_GE3 | SQM70060EL_GE3 |
| Product Name | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 166000 milliwatts | 166000 milliwatts | 166000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
