Vishay Intertechnology, Inc. Single FETs, MOSFETs SQM60030E_GE3

Description
N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SQM60030E_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM60030E_GE3CT-ND
Single FETs, MOSFETs SQM60030E_GE3CT-ND
N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - SQM60030E_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM60030E_GE3DKR-ND
Single FETs, MOSFETs SQM60030E_GE3DKR-ND
N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - SQM60030E_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQM60030E_GE3TR-ND
Single FETs, MOSFETs SQM60030E_GE3TR-ND
N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
N-Channel 120A 80V 0.0032ohm MOSFET Transistor
278-SQM60030E_GE3
N-Channel 120A 80V 0.0032ohm MOSFET Transistor 278-SQM60030E_GE3
Power Field-Effect Transistor, 120A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Product overview: SQM60030E_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 80V, 0.0032ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 80V, 0.0032ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM60030E_GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 120A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 Product overview: SQM60030E_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 120A, 80V, 0.0032ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120A, 80V, 0.0032ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQM60030E_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1086826-SQM60030E_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1086826-SQM60030E_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1086826-SQM60030E_GE3
Win Source Part Number: 1086826-SQM60030E_GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, TrenchFET® Package: Tape & Reel Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 375W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): SQM60030E_GE3SQM6003 0E-GE3; SQM60030E/GE3; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SQM60030E_GE3DKR,SQM 60030E_GE3TR,SQM6003 0E_GE3CT Base Product Number: SQM60030 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1086826-SQM60030E_GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): SQM60030E_GE3SQM60030E-GE3; SQM60030E/GE3;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SQM60030E_GE3DKR,SQM60030E_GE3TR,SQM60030E_GE3CT
Base Product Number: SQM60030
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SQM60030E_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQM60030E_GE3
Single FETs, MOSFETs SQM60030E_GE3
MOSFET N-CH 80V 120A D2PAK

MOSFET N-CH 80V 120A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQM60030E_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQM60030E_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQM60030E_GE3
MOSFET N-CH 80V 120A D2PAK

MOSFET N-CH 80V 120A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified

MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQM60030E_GE3CT-ND 278-SQM60030E_GE3 1086826-SQM60030E_GE3 SQM60030E_GE3 SQM60030E_GE3 SQM60030E_GE3
Product Name Single FETs, MOSFETs N-Channel 120A 80V 0.0032ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
PD 375000 milliwatts 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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