Vishay Intertechnology, Inc. MOSFET SQM110P06-8m9L_GE3

Description
MOSFET P-Channel 60V Automotive MOSFET
Description
MOSFET P-Channel 60V Automotive MOSFET
Datasheet
Datasheet Summary
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SQM110P06-8m9L_GE3 is an automotive-grade P-channel MOSFET with a 60 V drain-source voltage rating and a continuous drain current of 110 A at 25 °C, housed in a TO-263 (D-PAK) package measuring 9.65 mm by 10.41 mm, optimized for low thermal resistance with a junction-to-case thermal resistance of 0.65 °C/W. The device has a maximum on-state resistance of 0.0189 Ω at 175 °C and 10 V gate-source bias, is AEC-Q101 qualified, and operates over a junction and storage temperature range of -55 °C to +175 °C.

Datasheet Summary
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SQM110P06-8m9L_GE3 is an automotive-grade P-channel MOSFET with a 60 V drain-source voltage rating and a continuous drain current of 110 A at 25 °C, housed in a TO-263 (D-PAK) package measuring 9.65 mm by 10.41 mm, optimized for low thermal resistance with a junction-to-case thermal resistance of 0.65 °C/W. The device has a maximum on-state resistance of 0.0189 Ω at 175 °C and 10 V gate-source bias, is AEC-Q101 qualified, and operates over a junction and storage temperature range of -55 °C to +175 °C.

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MOSFET P-Channel 60V Automotive MOSFET

MOSFET P-Channel 60V Automotive MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SQM110P06-8m9L_GE3
Product Name MOSFET
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