Mosfet Array 2 N-Channel (Dual) 60V 20A (Tc) 35W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 20A (Tc) 35W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 60V 20A (Tc) 35W Surface Mount PowerPAK® SO-8 Dual
Trans MOSFET N-CH 60V 20A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SQJ958EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ958EP-T1_GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1278528-SQJ958EP-T1_
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 34.9mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 35W
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Other Names: SQJ958EP-T1_GE3DKR,S
Base Product Number: SQJ958
MOSFET 2N-CH 60V 20A PPAK SO8
MOSFET Dual 60V PowerPAK AEC-Q101 Qualified
MOSFET 2 N-CH 60V POWERPAK SO8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ958EP-T1_GE3DKR-ND | 278-SQJ958EP-T1_GE3 | 1278528-SQJ958EP-T1_GE3 | SQJ958EP-T1_GE3 | SQJ958EP-T1_GE3 | SQJ958EP-T1_GE3 |
| Product Name | FET, MOSFET Arrays | Automotive 60V 20A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | FET, MOSFET Arrays |
| Package Type | SO-8; PowerPAK® SO-8 Dual | Tape and Reel | SO-8; SOT3 | Automotive | SO-8; PowerPAK® SO-8 Dual | |
| Transistor Grade / Operating Range | Automotive | |||||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 35000 milliwatts |
