Power Field-Effect Transistor, 30A I(D), 40V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ912AEP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 40V, 0.0093ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 40V, 0.0093ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ912AEP-T1_GE3
Mosfet Array 2 N-Channel (Dual) 40V 30A 48W Surface Mount PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Win Source Part Number: 795331-SQJ912AEP-T1_
Series: Automotive, AEC-Q101, TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: PowerPAK SO-8 Dual
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 30A
Power - Max: 48W
Family Name: SQJ912AEP
Categories: Discrete Semiconductor Products
Manufacturer Package: PowerPAK SO-8 Dual
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1835pF @ 20V
Rds On (Maximum) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V
Alternative Parts (Cross-Reference): SQJ912AEP-T1-GE3;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 40V 30A PPAK SO-8
MOSFET 2N-CH 40V 30A PPAK SO8
MOSFET 40V 30A 48W AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ912AEP-T1_GE3 | SQJ912AEP-T1_GE3TR-ND | 795331-SQJ912AEP-T1_GE3 | SQJ912AEP-T1_GE3 | SQJ912AEP-T1_GE3 | SQJ912AEP-T1_GE3 |
| Product Name | N-Channel 30A 40V 0.0093ohm MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ912AEP-T1_GE3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | SO-8; PowerPAK® SO-8 Dual | SO-8; SOT3 | SO-8; PowerPAK® SO-8 Dual | Automotive | ||
| Transistor Grade / Operating Range | Automotive | |||||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
