Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN Product overview: SQJ910AEP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30A, 30V, 0.007ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30A, 30V, 0.007ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ910AEP-T1_GE3
Manufacturer: Vishay
Win Source Part Number: 897246-SQJ910AEP-T1_
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Package: PowerPAK® SO-8 Dual
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ910
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ910AEP-T1_GE3-ND,
MOSFET 2 N-CH 30V POWERPAK SO8
Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
MOSFET 2N-CH 30V 30A PPAK SO8
MOSFET Dual N-Channel 30V AEC-Q101 Qualified
MOSFET Dual N-Channel 30V AEC-Q101 Qualified
MOSFET, DUAL, N-CH, 30V, POWERPAK SO ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ910AEP-T1_GE3 | 897246-SQJ910AEP-T1_GE3 | SQJ910AEP-T1_GE3 | SQJ910AEP-T1_GE3TR-ND | SQJ910AEP-T1_GE3 | 880-SQJ910AEP-T1_GE3 | SQJ910AEP-T1_GE3 | 57AJ0710 |
| Product Name | N-Channel 30A 30V 0.007ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ910AEP-T1_GE3 | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | MOSFET | Mosfet, Dual, N-Ch, 30V, Powerpak So Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SO-8; SOT3; PowerPAK® SO-8 Dual | SO-8; PowerPAK® SO-8 Dual | SO-8; PowerPAK® SO-8 Dual | Automotive | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 30 volts | 30 volts |
