N-CHANNEL 100-V (D-S) 175C MOSFE
N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 980392-SQJ488EP-T2_G
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SQJ488EP-T2_GE3C
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-CHANNEL 100-V (D-S) 175C MOSFE
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors |
| Product Number | SQJ488EP-T2_GE3 | 742-SQJ488EP-T2_GE3CT-ND | 980392-SQJ488EP-T2_GE3 | SQJ488EP-T2_GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 100 volts | |||
| IDSS | 42000 milliamps | |||
| PD | 83000 milliwatts |
