MOSFET P-CH 60V 36A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 934912-SQJ457EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 60 V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ457
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ457EP-T1_GE3DKR, SQJ457EP-T1_GE3CT, SQJ457EP-T1_GE3TR
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, P-CH, 60V, 36A, 175DEG C, 68W ROHS COMPLIANT: YES
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
MOSFET P-CH 60V 36A PPAK SO-8
| ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQJ457EP-T1_GE3 | 1807972P | 934912-SQJ457EP-T1_GE3 | SQJ457EP-T1_GE3TR-ND | 75AH9218 | SQJ457EP-T1_GE3 | SQJ457EP-T1_GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ457EP-T1_GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, 60V, 36A, 175Deg C, 68W Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | ||||||
| IDSS | 36000 milliamps | ||||||
| PD | 68000 milliwatts |
