MOSFET P-CH 60V 36A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 934912-SQJ457EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 60 V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ457
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ457EP-T1_GE3DKR, SQJ457EP-T1_GE3CT, SQJ457EP-T1_GE3TR
Power Field-Effect Transistor, Product overview: SQJ457EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ457EP-T1_GE3 can be used for catalog matching and distributor lookup.
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 60V 36A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET P-CH 60V 36A PPAK SO-8
MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
MOSFET, P-CH, 60V, 36A, 175DEG C, 68W ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SQJ457EP-T1_GE3 | 934912-SQJ457EP-T1_GE3 | 1807972P | 278-SQJ457EP-T1_GE3 | SQJ457EP-T1_GE3TR-ND | SQJ457EP-T1_GE3 | SQJ457EP-T1_GE3 | 75AH9218 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ457EP-T1_GE3 | MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 60V, 36A, 175Deg C, 68W Rohs Compliant Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | |||||||
| IDSS | 36000 milliamps | |||||||
| PD | 68000 milliwatts |