Automotive P-Channel 200 V (D-S) 175C MO
Automotive P-Channel 200 V (D-S) 175C MO
Automotive P-Channel 200 V (D-S) 175C MO
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJ431AEP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 9.4A, 200V, 0.315ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9.4A, 200V, 0.315ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ431AEP-T1_GE3
MOSFET P-CH 200V 9.4A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 897237-SQJ431AEP-T1_
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 200 V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8 Dual
Package: PowerPAK® SO-8 Dual
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ431
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8 Dual
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ431AEP-T1_GE3TR, SQJ431AEP-T1_GE3CT, SQJ431AEP-T1_GE3DKR
P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
MOSFET P-CH 200V 9.4A PPAK SO-8
MOSFET -200V Vds 20V Vgs PowerPAK SO-8L
MOSFET, P-CH, -200V, -9.4A, 175DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.254ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1783873P | 1783718 | 278-SQJ431AEP-T1_GE3 | SQJ431AEP-T1_GE3 | 897237-SQJ431AEP-T1_GE3 | SQJ431AEP-T1_GE3DKR-ND | SQJ431AEP-T1_GE3 | SQJ431AEP-T1_GE3 | 81AC2819 |
| Product Name | MOSFETs | MOSFETs | P-Channel 9.4A 200V 0.315ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ431AEP-T1_GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -200V, -9.4A, 175Deg C; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Package Type | SO-8; SO-8 | SO-8; So-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK® SO-8 Dual | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 | ||
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 1 | ||||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
