Power Field-Effect Transistor, 60A I(D), 30V, 0.0044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN Product overview: SQJ407EP-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60A, 30V, 0.0044ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60A, 30V, 0.0044ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQJ407EP-T1_GE3 can be used for catalog matching and distributor lookup.
P-Channel 30V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 30V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
P-Channel 30V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 934909-SQJ407EP-T1_G
Series: Automotive, AEC-Q101, TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SQJ407
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SQJ407EP-T1_GE3CT, SQJ407EP-T1_GE3TR, SQJ407EP-T1_GE3DKR
MOSFET, AEC-Q101, P-CH, -30V/POWERPAKSO; Channel Type:P Channel; Drain Source Voltage Vds:-30V; Continuous Drain Current Id:-60A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V; Power Dissipation:68W RoHS Compliant: Yes
MOSFET P-CH 30V 60A PPAK SO-8
MOSFET P-CH 30V 60A PPAK SO-8
MOSFET -30V Vds PowerPAK AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQJ407EP-T1_GE3 | SQJ407EP-T1_GE3TR-ND | 934909-SQJ407EP-T1_GE3 | 15AC8695 | SQJ407EP-T1_GE3 | SQJ407EP-T1_GE3 | SQJ407EP-T1_GE3 |
| Product Name | P-Channel 60A 30V 0.0044ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQJ407EP-T1_GE3 | Mosfet, Aec-Q101, P-Ch, -30V/powerpakso; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| IDSS | -60000 milliamps | 60000 milliamps |
