MOSFET N-CH 150V 25A TO252 Product overview: SQD25N15-52_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 25A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 25A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD25N15-52_GE3 can be used for catalog matching and distributor lookup.
N-Channel 150V 25A (Tc) 107W (Tc) Surface Mount TO-252AA
N-Channel 150V 25A (Tc) 107W (Tc) Surface Mount TO-252AA
N-Channel 150V 25A (Tc) 107W (Tc) Surface Mount TO-252AA
Manufacturer: Vishay Siliconix
Win Source Part Number: 795328-SQD25N15-52_G
Series: Automotive, AEC-Q101, TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Family Name: SQD25N15-52
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-252, (D-Pak)
Channel Type Type: N
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2200pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 107W (Tc)
Rds On (Maximum) @ Id, Vgs: 52 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): TSM15N15CP ROG; 2SK3210(S)-E; RJK1535DPE; 2SK3210(S);
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
MOSFET N-CH 150V 25A TO252
MOSFET 150V 25A 136W AEC-Q101 Qualified
MOSFET N-CH 150V 25A TO252
MOSFET, N-CH, 150V, 25A, TO-252AA ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQD25N15-52_GE3 | SQD25N15-52_GE3TR-ND | 795328-SQD25N15-52_GE3 | SQD25N15-52_GE3 | SQD25N15-52_GE3 | SQD25N15-52_GE3 | 26AK5821 |
| Product Name | 150V 25A TO252 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD25N15-52_GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 150V, 25A, To-252Aa Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0330 kS | ||||||
| PD | 107 milliwatts | 107000 milliwatts | 107000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
