MOSFET N-CH 60V 23A TO252 Product overview: SQD23N06-31L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 23A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 23A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD23N06-31L_GE3
Manufacturer: Vishay
Win Source Part Number: 1101722-SQD23N06-31L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 845pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 60V, 23A, TO-252 ROHS COMPLIANT: YES
MOSFET N-CH 60V 23A TO252
MOSFET N-CH 60V 23A TO252
MOSFET 60V 23A 100W AEC-Q101 Qualified
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Radwell International | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SQD23N06-31L_GE3 | 1101722-SQD23N06-31L_GE3 | SQD23N06-31L_GE3TR-ND | 39148570 | 57AJ0693 | SQD23N06-31L_GE3 | SQD23N06-31L_GE3 | SQD23N06-31L_GE3 |
| Product Name | 60V 23A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3 | Single FETs, MOSFETs | Transistor | Mosfet, N-Ch, 60V, 23A, To-252 Rohs Compliant Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0250 kS | |||||||
| PD | 37 milliwatts | 37000 milliwatts | 37000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
