Manufacturer: Vishay
Win Source Part Number: 1101722-SQD23N06-31L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 845pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
MOSFET N-CH 60V 23A TO252
MOSFET N-CH 60V 23A TO252 Product overview: SQD23N06-31L_GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 23A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 23A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQD23N06-31L_GE3
MOSFET N-CH 60V 23A TO252
MOSFET 60V 23A 100W AEC-Q101 Qualified
POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 60V, 23A, TO-252 ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1101722-SQD23N06-31L_GE3 | SQD23N06-31L_GE3TR-ND | SQD23N06-31L_GE3 | 278-SQD23N06-31L_GE3 | SQD23N06-31L_GE3 | SQD23N06-31L_GE3 | 39148570 | 57AJ0693 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 23A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor | Mosfet, N-Ch, 60V, 23A, To-252 Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 37000 milliwatts | 37000 milliwatts | 37 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; TO-252 (DPAK); TO-252, (D-Pak) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 |
