Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3 SQD23N06-31L_GE3

Description
Manufacturer: Vishay Win Source Part Number: 1101722-SQD23N06-31L _GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 845pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1101722-SQD23N06-31L _GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 845pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3 - 1101722-SQD23N06-31L_GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3
1101722-SQD23N06-31L_GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3 1101722-SQD23N06-31L_GE3
Manufacturer: Vishay Win Source Part Number: 1101722-SQD23N06-31L _GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 845pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1101722-SQD23N06-31L_GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 845pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SQD23N06-31L_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQD23N06-31L_GE3
Single FETs, MOSFETs SQD23N06-31L_GE3
MOSFET N-CH 60V 23A TO252

MOSFET N-CH 60V 23A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - SQD23N06-31L_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD23N06-31L_GE3TR-ND
Single FETs, MOSFETs SQD23N06-31L_GE3TR-ND
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA

N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD23N06-31L_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD23N06-31L_GE3CT-ND
Single FETs, MOSFETs SQD23N06-31L_GE3CT-ND
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA

N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - SQD23N06-31L_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SQD23N06-31L_GE3DKR-ND
Single FETs, MOSFETs SQD23N06-31L_GE3DKR-ND
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA

N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Transistor - 39148570 - Radwell International
Willingboro, NJ, United States
Transistor
39148570
Transistor 39148570
POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQD23N06-31L_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQD23N06-31L_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQD23N06-31L_GE3
MOSFET N-CH 60V 23A TO252

MOSFET N-CH 60V 23A TO252

Supplier's Site
MOSFET 60V 23A 100W AEC-Q101 Qualified

MOSFET 60V 23A 100W AEC-Q101 Qualified

Buy Now Datasheet
Mosfet, N-Ch, 60V, 23A, To-252 Rohs Compliant Vishay - 57AJ0693 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 23A, To-252 Rohs Compliant Vishay
57AJ0693
Mosfet, N-Ch, 60V, 23A, To-252 Rohs Compliant Vishay 57AJ0693
MOSFET, N-CH, 60V, 23A, TO-252 ROHS COMPLIANT: YES

MOSFET, N-CH, 60V, 23A, TO-252 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1101722-SQD23N06-31L_GE3 SQD23N06-31L_GE3 SQD23N06-31L_GE3TR-ND 39148570 SQD23N06-31L_GE3 SQD23N06-31L_GE3 57AJ0693
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3 Single FETs, MOSFETs Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 23A, To-252 Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 37000 milliwatts 37000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); TO-252, (D-Pak) TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
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