POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 60V, 0.031OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: Vishay
Win Source Part Number: 1101722-SQD23N06-31L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 845pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 23A TO252
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
N-Channel 60V 23A (Tc) 37W (Tc) Surface Mount TO-252AA
MOSFET, N-CH, 60V, 23A, TO-252 ROHS COMPLIANT: YES
MOSFET 60V 23A 100W AEC-Q101 Qualified
MOSFET N-CH 60V 23A TO252
| Radwell International | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 39148570 | 1101722-SQD23N06-31L_GE3 | SQD23N06-31L_GE3 | SQD23N06-31L_GE3TR-ND | 57AJ0693 | SQD23N06-31L_GE3 | SQD23N06-31L_GE3 |
| Product Name | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SQD23N06-31L_GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 23A, To-252 Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 37000 milliwatts | 37000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; TO-252 (DPAK); TO-252, (D-Pak) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
