Vishay Intertechnology, Inc. Single FETs, MOSFETs SQA600CEJW-T1_GE3

N-Channel 80V 9A (Tc) 13.6W (Tc) Surface Mount, Wettable Flank PowerPAK®SC-70W-6

N-Channel 80V 9A (Tc) 13.6W (Tc) Surface Mount, Wettable Flank PowerPAK®SC-70W-6

N-Channel 80V 9A (Tc) 13.6W (Tc) Surface Mount, Wettable Flank PowerPAK®SC-70W-6

MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET Product overview: SQA600CEJW-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SQA600CEJW-T1_GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1357303-SQA600CEJW-T1_GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: Automotive, AEC-Q101, TrenchFET®
Package: Tape & Reel
Product Status: Active
Package / Case: 6-PowerVDFN
Supplier Device Package: PowerPAK®SC-70W-6
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 54.6mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Power Dissipation (Max): 13.6W (Tc)
Mounting Type: Surface Mount, Wettable Flank
HTSUS: 8541.29.0095
ECCN: EAR99