Mosfet Array 2 N-Channel (Dual) 60V 5.4A 4W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.4A 4W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 5.4A 4W Surface Mount 8-SOIC
Trans MOSFET N-CH 60V 5.4A Automotive AEC-Q101 8-Pin SOIC N T/R Product overview: SQ9945BEY-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 60V, 5.4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 60V, 5.4A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ9945BEY-T1_GE3
MOSFET 60V 5.4A 4W AEC-Q101 Qualified
MOSFET, N-CH, 60V, 6A, 175DEG C, 4W ROHS COMPLIANT: YES
MOSFET 2N-CH 60V 5.4A
MOSFET 2N-CH 60V 5.4A 8SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SQ9945BEY-T1_GE3CT-ND | 278-SQ9945BEY-T1_GE3 | SQ9945BEY-T1_GE3 | 75AH9259 | SQ9945BEY-T1_GE3 | SQ9945BEY-T1_GE3 |
| Product Name | FET, MOSFET Arrays | Automotive 60V 5.4A SOIC MOSFET Transistor | MOSFET | Mosfet, N-Ch, 60V, 6A, 175Deg C, 4W Rohs Compliant Vishay | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape and Reel | TO-3 | 8-SOIC (0.154", 3.90mm Width) | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 4000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
