Vishay Precision Group Electronic Surplus - SQ2301ES-T1_GE3 SQ2301ES-T1_GE3

Description
Manufacturer: Vishay Win Source Part Number: 720536-SQ2301ES-T1_G E3 Series: Automotive, AEC-Q101, TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TA) Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-236 (SOT-23) Channel Type Type: P Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 1.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 425pF @ 10V Vgs (Maximum): ±8V Power Dissipation (Maximum): 3W (Tc) Rds On (Maximum) @ Id, Vgs: 120 mOhm @ 2.8A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 720536-SQ2301ES-T1_G E3 Series: Automotive, AEC-Q101, TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TA) Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-236 (SOT-23) Channel Type Type: P Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 1.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 425pF @ 10V Vgs (Maximum): ±8V Power Dissipation (Maximum): 3W (Tc) Rds On (Maximum) @ Id, Vgs: 120 mOhm @ 2.8A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Electronic Surplus - SQ2301ES-T1_GE3 - 720536-SQ2301ES-T1_GE3 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - SQ2301ES-T1_GE3
720536-SQ2301ES-T1_GE3
Electronic Surplus - SQ2301ES-T1_GE3 720536-SQ2301ES-T1_GE3
Manufacturer: Vishay Win Source Part Number: 720536-SQ2301ES-T1_G E3 Series: Automotive, AEC-Q101, TrenchFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TA) Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Homepage: www.vishay.com Manufacturer Package: TO-236 (SOT-23) Channel Type Type: P Drain Source Voltage: 20V Vgs(th) (Maximum) @ Id: 1.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 425pF @ 10V Vgs (Maximum): ±8V Power Dissipation (Maximum): 3W (Tc) Rds On (Maximum) @ Id, Vgs: 120 mOhm @ 2.8A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 720536-SQ2301ES-T1_GE3
Series: Automotive, AEC-Q101, TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TA)
Package: TO-236-3, SC-59, SOT-23-3
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: TO-236 (SOT-23)
Channel Type Type: P
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 425pF @ 10V
Vgs (Maximum): ±8V
Power Dissipation (Maximum): 3W (Tc)
Rds On (Maximum) @ Id, Vgs: 120 mOhm @ 2.8A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQ2301ES-T1_GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQ2301ES-T1_GE3DKR-ND
Single FETs, MOSFETs 742-SQ2301ES-T1_GE3DKR-ND
P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQ2301ES-T1_GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQ2301ES-T1_GE3CT-ND
Single FETs, MOSFETs 742-SQ2301ES-T1_GE3CT-ND
P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

Buy Now Datasheet
Single FETs, MOSFETs - 742-SQ2301ES-T1_GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SQ2301ES-T1_GE3TR-ND
Single FETs, MOSFETs 742-SQ2301ES-T1_GE3TR-ND
P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

P-Channel 20V 3.9A (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23)

Buy Now Datasheet
Singapore, Singapore
Automotive 20V 3.9A SOT-23 MOSFET Transistor
278-SQ2301ES-T1_GE3
Automotive 20V 3.9A SOT-23 MOSFET Transistor 278-SQ2301ES-T1_GE3
Trans MOSFET P-CH Si 20V 3.9A Automotive AEC-Q101 3-Pin SOT-23 T/R Product overview: SQ2301ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 20V, 3.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 20V, 3.9A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2301ES-T1_GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH Si 20V 3.9A Automotive AEC-Q101 3-Pin SOT-23 T/R Product overview: SQ2301ES-T1_GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 20V, 3.9A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 20V, 3.9A, SOT-23, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SQ2301ES-T1_GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET P-Channel 20V AEC-Q101 Qualified

MOSFET P-Channel 20V AEC-Q101 Qualified

Buy Now Datasheet
Single FETs, MOSFETs - SQ2301ES-T1_GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SQ2301ES-T1_GE3
Single FETs, MOSFETs SQ2301ES-T1_GE3
MOSFET P-CH 20V 3.9A TO236

MOSFET P-CH 20V 3.9A TO236

Supplier's Site Datasheet
Mosfet, P-Ch, 20V, 3.9A, 175Deg C, 3W; Channel Type Vishay - 61AC2038 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 3.9A, 175Deg C, 3W; Channel Type Vishay
61AC2038
Mosfet, P-Ch, 20V, 3.9A, 175Deg C, 3W; Channel Type Vishay 61AC2038
MOSFET, P-CH, 20V, 3.9A, 175DEG C, 3W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:3W; No. of Pins:3PinsRoHS Compliant: Yes

MOSFET, P-CH, 20V, 3.9A, 175DEG C, 3W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:3W; No. of Pins:3PinsRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SQ2301ES-T1_GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SQ2301ES-T1_GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SQ2301ES-T1_GE3
MOSFET P-CH 20V 3.9A TO236

MOSFET P-CH 20V 3.9A TO236

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 720536-SQ2301ES-T1_GE3 742-SQ2301ES-T1_GE3DKR-ND 278-SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 SQ2301ES-T1_GE3 61AC2038 SQ2301ES-T1_GE3
Product Name Electronic Surplus - SQ2301ES-T1_GE3 Single FETs, MOSFETs Automotive 20V 3.9A SOT-23 MOSFET Transistor MOSFET Single FETs, MOSFETs Mosfet, P-Ch, 20V, 3.9A, 175Deg C, 3W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 3000 milliwatts 3000 milliwatts 3000 milliwatts 3000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 Tape and Reel SOT23; TO-236-3, SC-59, SOT-23-3 TO-3 Surface Mount
Packing Method Tape Reel; Reel - TR Tape and Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Polarity P-Channel P-Channel; P-Channel
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