Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays SIZ322DT-T1-GE3

Description
Win Source Part Number: 1278500-SIZ322DT-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power - Max: 16.7W (Tc) Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3) Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIZ322DT-T1-GE3DKR,S IZ322DT-T1-GE3CT,SIZ 322DT-T1-GE3TR Base Product Number: SIZ322
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Description
Win Source Part Number: 1278500-SIZ322DT-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power - Max: 16.7W (Tc) Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3) Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIZ322DT-T1-GE3DKR,S IZ322DT-T1-GE3CT,SIZ 322DT-T1-GE3TR Base Product Number: SIZ322
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1278500-SIZ322DT-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1278500-SIZ322DT-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1278500-SIZ322DT-T1-GE3
Win Source Part Number: 1278500-SIZ322DT-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power - Max: 16.7W (Tc) Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3) Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIZ322DT-T1-GE3DKR,S IZ322DT-T1-GE3CT,SIZ 322DT-T1-GE3TR Base Product Number: SIZ322

Win Source Part Number: 1278500-SIZ322DT-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power - Max: 16.7W (Tc)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 12.5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIZ322DT-T1-GE3DKR,SIZ322DT-T1-GE3CT,SIZ322DT-T1-GE3TR
Base Product Number: SIZ322

Buy Now Datasheet
FET, MOSFET Arrays - SIZ322DT-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIZ322DT-T1-GE3DKR-ND
FET, MOSFET Arrays SIZ322DT-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 25V 30A (Tc) 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Mosfet Array 2 N-Channel (Dual) 25V 30A (Tc) 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Buy Now Datasheet
FET, MOSFET Arrays - SIZ322DT-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIZ322DT-T1-GE3CT-ND
FET, MOSFET Arrays SIZ322DT-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 25V 30A (Tc) 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Mosfet Array 2 N-Channel (Dual) 25V 30A (Tc) 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Buy Now Datasheet
FET, MOSFET Arrays - SIZ322DT-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIZ322DT-T1-GE3TR-ND
FET, MOSFET Arrays SIZ322DT-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 25V 30A (Tc) 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Mosfet Array 2 N-Channel (Dual) 25V 30A (Tc) 16.7W (Tc) Surface Mount 8-Power33 (3x3)

Buy Now Datasheet
FET, MOSFET Arrays - SIZ322DT-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SIZ322DT-T1-GE3
FET, MOSFET Arrays SIZ322DT-T1-GE3
MOSFET 2 N-CH 25V 30A 8-POWER33

MOSFET 2 N-CH 25V 30A 8-POWER33

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3

MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3

Buy Now Datasheet
Mosfet, Dual N-Ch, 25V, 30A, Powerpair; Transistor Polarity Vishay - 81AC2803 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 25V, 30A, Powerpair; Transistor Polarity Vishay
81AC2803
Mosfet, Dual N-Ch, 25V, 30A, Powerpair; Transistor Polarity Vishay 81AC2803
MOSFET, DUAL N-CH, 25V, 30A, POWERPAIR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00529ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; RoHS Compliant: Yes

MOSFET, DUAL N-CH, 25V, 30A, POWERPAIR; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00529ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIZ322DT-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIZ322DT-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIZ322DT-T1-GE3
MOSFET 2N-CH 25V 30A 8PWR33

MOSFET 2N-CH 25V 30A 8PWR33

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1278500-SIZ322DT-T1-GE3 SIZ322DT-T1-GE3DKR-ND SIZ322DT-T1-GE3 SIZ322DT-T1-GE3 81AC2803 SIZ322DT-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays FET, MOSFET Arrays MOSFET Mosfet, Dual N-Ch, 25V, 30A, Powerpair; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual)
Package Type SOT3 8-PowerWDFN 8-PowerWDFN TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 25 volts
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