Vishay Intertechnology, Inc. Single FETs, MOSFETs SIUD412ED-T1-GE3

N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount PowerPAK® 0806

N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount PowerPAK® 0806

N-Channel 12V 500mA (Tc) 1.25W (Ta) Surface Mount PowerPAK® 0806

Trans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R Product overview: SIUD412ED-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 0.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 0.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIUD412ED-T1-GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1277605-SIUD412ED-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
Vgs (Max): ±5V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIUD412ED-T1-GE3TR,SIUD412ED-T1-GE3DKR,SIUD412ED-T1-GE3CT
Base Product Number: SIUD412
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V