MOSFET N-CH 200V 14.1A PPAK
Win Source Part Number: 970253-SISS98DN-T1-G
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 57W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS98DN-T1-GE3DKR,S
Base Product Number: SISS98
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Trans MOSFET N-CH 200V 14.1A 8-Pin PowerPAK 1212-S EP T/R Product overview: SISS98DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 14.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 14.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS98DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 200V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 200V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 200V 14.1A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET, N-CH, 200V, 14.1A, 150DEG C, 57W ROHS COMPLIANT: YES
MOSFET N-CH 200V 14.1A PPAK
MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISS98DN-T1-GE3 | 970253-SISS98DN-T1-GE3 | 278-SISS98DN-T1-GE3 | SISS98DN-T1-GE3CT-ND | 75AH9199 | SISS98DN-T1-GE3 | SISS98DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 200V 14.1A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 200V, 14.1A, 150Deg C, 57W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 200 volts | ||||||
| IDSS | 14100 milliamps | ||||||
| PD | 57000 milliwatts | 57000 milliwatts | 57 milliwatts |
