The Vishay P-Channel MOSFET, part number SiSS65DN, is designed for applications requiring a maximum drain-source voltage of -30V and a continuous drain current of -94A. It features a low on-resistance of 0.0046Oc at a gate-source voltage of -10V, making it suitable for efficient power management. The device operates within a temperature range of -55¬8C to +150¬8C and is packaged in a PowerPAK 1212-8S configuration. It is tested for gate resistance and has a total gate charge of 44nC, which contributes to its performance in applications such as load switching, motor drive control, and DC/DC converters. The MOSFET is also compliant with RoHS standards, ensuring it meets environmental regulations.
P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Trans MOSFET P-CH 30V 25.9A 8-Pin PowerPAK 1212 EP T/R Product overview: SISS65DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 25.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 25.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS65DN-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277677-SISS65DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS65DN-T1-GE3DKR,S
Base Product Number: SISS65
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, P-CH, -30V, -94A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-94A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.3V; Power RoHS Compliant: Yes
MOSFET P-CH 30V 25.9A/94A PPAK
MOSFET P-CH 30V 25.9A/94A PPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SISS65DN-T1-GE3TR-ND | 278-SISS65DN-T1-GE3 | 1277677-SISS65DN-T1-GE3 | 99AC9593 | SISS65DN-T1-GE3 | SISS65DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 30V 25.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, P-Ch, -30V, -94A, 150Deg C; Transistor Polarity Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | PowerPAK® 1212-8S | Tape and Reel | SOT3 | TO-3 | PowerPAK® 1212-8S | PowerPAKR 1212-8S |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| Transconductance | 0.0620 kS |
