Vishay Precision Group Single FETs, MOSFETs SISS60DN-T1-GE3

Description
N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
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Description
N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SISS60DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SISS60DN-T1-GE3CT-ND
Single FETs, MOSFETs 742-SISS60DN-T1-GE3CT-ND
N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

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Single FETs, MOSFETs - 742-SISS60DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SISS60DN-T1-GE3TR-ND
Single FETs, MOSFETs 742-SISS60DN-T1-GE3TR-ND
N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

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Single FETs, MOSFETs - 742-SISS60DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SISS60DN-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SISS60DN-T1-GE3DKR-ND
N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS60DN-T1-GE3 - 933848-SISS60DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS60DN-T1-GE3
933848-SISS60DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS60DN-T1-GE3 933848-SISS60DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 933848-SISS60DN-T1-G E3 Series: TrenchFET® Gen IV Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 30 V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S Package: PowerPAK® 1212-8S Package: Reel - TR Mounting: Surface Mount Family Name: SISS60 Categories: Discrete Semiconductor Products Case / Package: PowerPAK® 1212-8S ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SISS60DN-T1-GE3TR, SISS60DN-T1-GE3DKR, SISS60DN-T1-GE3CT

Manufacturer: Vishay
Win Source Part Number: 933848-SISS60DN-T1-GE3
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 50.1A (Ta), 181.8A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Package: PowerPAK® 1212-8S
Package: Reel - TR
Mounting: Surface Mount
Family Name: SISS60
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8S
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISS60DN-T1-GE3TR, SISS60DN-T1-GE3DKR, SISS60DN-T1-GE3CT

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Singapore
30V 181.8A MOSFET Transistor
278-SISS60DN-T1-GE3
30V 181.8A MOSFET Transistor 278-SISS60DN-T1-GE3
MOSFET N-CH 30V 50.1/181.8A PPAK Product overview: SISS60DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 181.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 181.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS60DN-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 50.1/181.8A PPAK Product overview: SISS60DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 181.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 181.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS60DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch+Schottky, 30V, 181.8A; Channel Type Vishay - 10AH0979 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch+Schottky, 30V, 181.8A; Channel Type Vishay
10AH0979
Mosfet, N-Ch+Schottky, 30V, 181.8A; Channel Type Vishay 10AH0979
MOSFET, N-CH+SCHOTTKY, 30V, 181.8A; Channel Type:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:181.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:65.8W RoHS Compliant: Yes

MOSFET, N-CH+SCHOTTKY, 30V, 181.8A; Channel Type:N Channel + Schottky; Drain Source Voltage Vds:30V; Continuous Drain Current Id:181.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:65.8W RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS60DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISS60DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISS60DN-T1-GE3
MOSFET N-CH 30V 50.1/181.8A PPAK

MOSFET N-CH 30V 50.1/181.8A PPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode

MOSFET N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 742-SISS60DN-T1-GE3CT-ND 933848-SISS60DN-T1-GE3 278-SISS60DN-T1-GE3 10AH0979 SISS60DN-T1-GE3 SISS60DN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS60DN-T1-GE3 30V 181.8A MOSFET Transistor Mosfet, N-Ch+Schottky, 30V, 181.8A; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel
Package Type PowerPAK® 1212-8S SOT3; PowerPAK® 1212-8S Tape & Reel (TR) TO-3 Surface Mount
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
MOSFET Operating Mode Enhancement
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