Vishay Intertechnology, Inc. Single FETs, MOSFETs SISS5207DN-T1-UE3

P-Channel 20 V MOSFET in a PowerPAK® 1212-8S surface-mount package measuring 3.3 mm × 3.3 mm, designed for load switching, battery management, and motor drive control. It has a maximum drain-source voltage of -20 V, continuous drain current of -136.7 A at T_C = 25 °C, and on-state resistance of 0.0022 Ω at V_GS = -10 V. The device is tested for 100 % R_g and UIS, and meets RoHS compliance. Operating junction and storage temperature range is -55 °C to +150 °C. Maximum junction-to-case thermal resistance is 1.9 °C/W.