Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SISS26LDN-T1-GE3

Description
Win Source Part Number: 1277617-SISS26LDN-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS26LDN-T1-GE3CT,S ISS26LDN-T1-GE3DKR,S ISS26LDN-T1-GE3TR Base Product Number: SISS26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277617-SISS26LDN-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS26LDN-T1-GE3CT,S ISS26LDN-T1-GE3DKR,S ISS26LDN-T1-GE3TR Base Product Number: SISS26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277617-SISS26LDN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277617-SISS26LDN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277617-SISS26LDN-T1-GE3
Win Source Part Number: 1277617-SISS26LDN-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS26LDN-T1-GE3CT,S ISS26LDN-T1-GE3DKR,S ISS26LDN-T1-GE3TR Base Product Number: SISS26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277617-SISS26LDN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS26LDN-T1-GE3CT,SISS26LDN-T1-GE3DKR,SISS26LDN-T1-GE3TR
Base Product Number: SISS26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - SISS26LDN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS26LDN-T1-GE3TR-ND
Single FETs, MOSFETs SISS26LDN-T1-GE3TR-ND
N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS26LDN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS26LDN-T1-GE3CT-ND
Single FETs, MOSFETs SISS26LDN-T1-GE3CT-ND
N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS26LDN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS26LDN-T1-GE3DKR-ND
Single FETs, MOSFETs SISS26LDN-T1-GE3DKR-ND
N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS26LDN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISS26LDN-T1-GE3
Single FETs, MOSFETs SISS26LDN-T1-GE3
MOSFET N-CH 60V 23.7A/81.2A PPAK

MOSFET N-CH 60V 23.7A/81.2A PPAK

Supplier's Site Datasheet
MOSFET Transistor 278-SISS26LDN-T1-GE3
Power Field-Effect Transistor, Product overview: SISS26LDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS26LDN-T1-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SISS26LDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS26LDN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S

MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S

Buy Now Datasheet
Mosfet, N-Ch, 60V, 81.2A, 150Deg C, 57W; Transistor Polarity Vishay - 06AH4241 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 81.2A, 150Deg C, 57W; Transistor Polarity Vishay
06AH4241
Mosfet, N-Ch, 60V, 81.2A, 150Deg C, 57W; Transistor Polarity Vishay 06AH4241
MOSFET, N-CH, 60V, 81.2A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:81.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; PowerRoHS Compliant: Yes

MOSFET, N-CH, 60V, 81.2A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:81.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; PowerRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS26LDN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISS26LDN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISS26LDN-T1-GE3
MOSFET N-CH 60V 23.7A/81.2A PPAK

MOSFET N-CH 60V 23.7A/81.2A PPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277617-SISS26LDN-T1-GE3 SISS26LDN-T1-GE3TR-ND SISS26LDN-T1-GE3 278-SISS26LDN-T1-GE3 SISS26LDN-T1-GE3 06AH4241 SISS26LDN-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Transistor MOSFET Mosfet, N-Ch, 60V, 81.2A, 150Deg C, 57W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SOT3 PowerPAK® 1212-8S PowerPAK® 1212-8S TO-3 Surface Mount
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts
IDSS 23700 milliamps 81200 milliamps
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