N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 60V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Power Field-Effect Transistor, Product overview: SISS26LDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS26LDN-T1-GE3
Win Source Part Number: 1277617-SISS26LDN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS26LDN-T1-GE3CT,S
Base Product Number: SISS26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 23.7A/81.2A PPAK
MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S
MOSFET N-CH 60V 23.7A/81.2A PPAK
MOSFET, N-CH, 60V, 81.2A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:81.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; PowerRoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISS26LDN-T1-GE3TR-ND | 278-SISS26LDN-T1-GE3 | 1277617-SISS26LDN-T1-GE3 | SISS26LDN-T1-GE3 | SISS26LDN-T1-GE3 | SISS26LDN-T1-GE3 | 06AH4241 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 81.2A, 150Deg C, 57W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | PowerPAK® 1212-8S | SOT3 | PowerPAK® 1212-8S | Surface Mount | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | ||||||
| IDSS | 23700 milliamps | 81200 milliamps |
