Vishay Precision Group Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs SISS22DN-T1-GE3

Description
Alternative Parts (Cross-Reference): Cross Manufacturer: Vishay Siliconix Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: TrenchFET® Gen IV Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
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Description
Alternative Parts (Cross-Reference): Cross Manufacturer: Vishay Siliconix Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: TrenchFET® Gen IV Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Alternative Parts (Cross-Reference): Cross Manufacturer: Vishay Siliconix Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: TrenchFET® Gen IV Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)

Alternative Parts (Cross-Reference): Cross
Manufacturer: Vishay Siliconix
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: TrenchFET® Gen IV
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)

Buy Now Datasheet
Single FETs, MOSFETs - SISS22DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS22DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISS22DN-T1-GE3DKR-ND
N-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

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Single FETs, MOSFETs - SISS22DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS22DN-T1-GE3TR-ND
Single FETs, MOSFETs SISS22DN-T1-GE3TR-ND
N-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

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Single FETs, MOSFETs - SISS22DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS22DN-T1-GE3CT-ND
Single FETs, MOSFETs SISS22DN-T1-GE3CT-ND
N-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

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Sheung Wan, Hong Kong
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S

MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S

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Mosfet, N-Ch, 60V, 90.6A, 65.7W; Transistor Polarity Vishay - 99AC0542 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 90.6A, 65.7W; Transistor Polarity Vishay
99AC0542
Mosfet, N-Ch, 60V, 90.6A, 65.7W; Transistor Polarity Vishay 99AC0542
MOSFET, N-CH, 60V, 90.6A, 65.7W; Transistor Polarity:N Channel; Continuous Drain Current Id:90.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00325ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 90.6A, 65.7W; Transistor Polarity:N Channel; Continuous Drain Current Id:90.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00325ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS22DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISS22DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISS22DN-T1-GE3
MOSFET N-CH 60V 25A/90.6A PPAK

MOSFET N-CH 60V 25A/90.6A PPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SISS22DN-T1-GE3DKR-ND SISS22DN-T1-GE3 99AC0542 SISS22DN-T1-GE3
Product Name Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 90.6A, 65.7W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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