Vishay Intertechnology, Inc. Single FETs, MOSFETs SISS10ADN-T1-BE3

N-Channel 40 V (D-S) MOSFET in a PowerPAK 1212-8S leadless package, designed for synchronous rectification, buck converters, and high-power-density DC/DC conversion. The device features a maximum on-state resistance of 0.00265 Ω at 10 V gate drive and 0.00395 Ω at 4.5 V gate drive, with a continuous drain current of 109 A at 25 °C and 86.8 A at 70 °C. It has a maximum junction-to-case thermal resistance of 2.2 °C/W and operates within a junction and storage temperature range of -55 °C to +150 °C. The part is lead-free, halogen-free, and meets the PowerPAK 1212-8S package dimensions of 3.3 mm × 3.3 mm. It is qualified for high-reliability applications and complies with RoHS.