N-Channel 30V 22A (Ta), 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 22A (Ta), 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 22A (Ta), 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH
Power Field-Effect Transistor, Product overview: SISHA12ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISHA12ADN-T1-GE
Manufacturer: Vishay
Win Source Part Number: 895128-SISHA12ADN-T1
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 22A (Ta), 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH
Package: PowerPAK® 1212-8SH
Package: Reel - TR
Mounting: Surface Mount
Family Name: SISHA12
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8SH
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISHA12ADN-T1-GE3CT,
MOSFET, N-CH, 30V, 25A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
MOSFET N-CH 30V 22A/25A PPAK
MOSFET N-Channel 30 V (D-S) MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISHA12ADN-T1-GE3CT-ND | 278-SISHA12ADN-T1-GE3 | 895128-SISHA12ADN-T1-GE3 | 10AH0976 | SISHA12ADN-T1-GE3 | SISHA12ADN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISHA12ADN-T1-GE3 | Mosfet, N-Ch, 30V, 25A, Powerpak 1212-8; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
