Win Source Part Number: 1093132-SISH434DN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISH434DN-T1-GE3TR,S
Base Product Number: SISH434
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 40V 17.6A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 40V 17.6A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 40V 17.6A (Ta), 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
MOSFET N-CH 40V 17.6A/35A PPAK
MOSFET 40V Vds; +/-20V Vgs PowerPAK 1212-8SH
MOSFET, N-CH, 35A, 40V, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1093132-SISH434DN-T1-GE3 | SISH434DN-T1-GE3CT-ND | SISH434DN-T1-GE3 | SISH434DN-T1-GE3 | 99AC9584 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 35A, 40V, Powerpak 1212; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | |||
| PD | 3800 to 52000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | PowerPAK® 1212-8SH | PowerPAKR 1212-8SH | TO-3 |
