N-Channel 30V 11.3A (Tc) 1.5W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 11.3A (Tc) 1.5W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 11.3A (Tc) 1.5W (Tc) Surface Mount PowerPAK® 1212-8SH
Win Source Part Number: 1093130-SISH112DN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -50°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISH112DN-T1-GE3-ND,
Base Product Number: SISH112
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
SISH112DN-T1-GE3 Vishay MOSFETs Transistor N-CH 30V 11.3A 8-Pin PowerPAK 1212-S T/R - Arrow.com Product overview: SISH112DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 11.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISH112DN-T1-GE3
MOSFET N-CH 30V 11.3A PPAK
MOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; PowerRoHS Compliant: Yes
MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SISH112DN-T1-GE3CT-ND | 1093130-SISH112DN-T1-GE3 | 278-SISH112DN-T1-GE3 | SISH112DN-T1-GE3 | 99AC9582 | SISH112DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 30V 11.3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 11.3A, 150Deg C, 1.5W; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | PowerPAK® 1212-8SH | SOT3 | Tape and Reel | Surface Mount | TO-3 | |
| PD | 1500 milliwatts | 3.8 milliwatts | ||||
| TJ | -50 to 150 C (-58 to 302 F) | -55 C (-67 F) | ||||
| MOSFET Operating Mode | Enhancement |
