Vishay Intertechnology, Inc. Single FETs, MOSFETs SIS626DN-T1-GE3

Description
N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet
Description
N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - SIS626DN-T1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS626DN-T1-GE3-ND
Single FETs, MOSFETs SIS626DN-T1-GE3-ND
N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1006873-SIS626DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1006873-SIS626DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1006873-SIS626DN-T1-GE3
Win Source Part Number: 1006873-SIS626DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 52W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V Vgs (Max): ±12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIS626 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

Win Source Part Number: 1006873-SIS626DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 52W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIS626
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS626DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS626DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS626DN-T1-GE3
MOSFET N-CH 25V 16A PPAK1212-8

MOSFET N-CH 25V 16A PPAK1212-8

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIS626DN-T1-GE3-ND 1006873-SIS626DN-T1-GE3 SIS626DN-T1-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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