Win Source Part Number: 1006873-SIS626DN-T1-
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 52W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIS626
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 25V 16A PPAK1212-8
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1006873-SIS626DN-T1-GE3 | SIS626DN-T1-GE3-ND | SIS626DN-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
