Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 EP T/R Product overview: SIS472BDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 15.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 15.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS472BDN-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 895110-SIS472BDN-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 15.3A (Ta), 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIS472
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
N-Channel 30V 15.3A (Ta), 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 30V 15.3A/38.3A PPAK
MOSFET N-CH 30V 15.3A/38.3A PPAK
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
MOSFET, N-CH, 30V, 38.3A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:38.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 15.3A/38.3A PPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIS472BDN-T1-GE3 | 895110-SIS472BDN-T1-GE3 | 742-SIS472BDN-T1-GE3TR-ND | SIS472BDN-T1-GE3 | 81AC2798 | SIS472BDN-T1-GE3 |
| Product Name | 30V 15.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS472BDN-T1-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 38.3A, 150Deg C; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | |||||
| PD | 3200 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tape and Reel | SOT3; PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | PowerPAKR 1212-8 |
