Manufacturer: Vishay
Win Source Part Number: 1096500-SIS443DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 135nC @ 10V
Max Input Capacitance: 4370pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.7 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
MOSFET P-CH 40V 35A PPAK 1212-8
P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET, P-CH, -40V, -35A, 150DEG C, 52W; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V RoHS Compliant: Yes
MOSFET Transistor, P Channel, -35 A, -40 V, 0.0097 ohm, -10 V, -1 V RoHS Compliant: Yes
MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
MOSFET P-CH 40V 35A PPAK 1212-8
40V 35A 11.7mΩ@10V,15A 2.3V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096500-SIS443DN-T1-GE3 | SIS443DN-T1-GE3 | SIS443DN-T1-GE3TR-ND | 70AC6483 | 19X1957 | SIS443DN-T1-GE3 | SIS443DN-T1-GE3 | SIS443DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS443DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -40V, -35A, 150Deg C, 52W; Channel Type Vishay | Mosfet Transistor, P Channel, -35 A, -40 V, 0.0097 Ohm, -10 V, -1 V Rohs Compliant Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||||
| PD | 3700 to 52000 milliwatts | 3700 milliwatts | 3700 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | TO-3 | TO-3 | PowerPAKR 1212-8 |
