The SIS406DN-T1-GE3 is an N-Channel MOSFET designed for applications requiring efficient power management. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating of 14A at 25¬8C, making it suitable for various switching applications. The device has a low on-state resistance (R_DS(on)) of 11 mOc at a gate-source voltage (V_GS) of 10V, which enhances its efficiency in power conversion tasks. This MOSFET is housed in a compact PowerPAK 1212-8 package, which offers a low thermal resistance profile, facilitating better heat dissipation. The operating temperature range is broad, from -55¬8C to +150¬8C, allowing for use in diverse environmental conditions. The gate charge (Q_g) is typically 8.4nC, indicating good switching performance, and it is optimized for PWM applications. The SIS406DN-T1-GE3 is also lead-free and halogen-free, aligning with modern environmental standards. Its specifications make it a viable option for engineers looking for reliable performance in load switching and adaptor applications.
MOSFET N-CH 30V 9A PPAK1212-8
N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 028771-SIS406DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 1100pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 11 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Trans MOSFET N-CH 30V 9A 8-Pin PowerPAK 1212 EP T/R Product overview: SIS406DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS406DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET, N CHANNEL, 30V, 9A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.5W RoHS Compliant: Yes
MOSFET, N-CH, 30V, 9A, POWERPAK 1212 ROHS COMPLIANT: YES
MOSFET 30V Vds 25V Vgs PowerPAK 1212-8
30V 9A 11mΩ@12A,10V 1.5W 3V@250uA null PowerPAK1212-8 MOSFETs ROHS
MOSFET N-CH 30V 9A PPAK1212-8
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIS406DN-T1-GE3 | SIS406DN-T1-GE3DKR-ND | 028771-SIS406DN-T1-GE3 | 278-SIS406DN-T1-GE3 | 15R4890 | 57AJ0411 | SIS406DN-T1-GE3 | SIS406DN-T1-GE3 | SIS406DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS406DN-T1-GE3 | 30V 9A MOSFET Transistor | Mosfet, N Channel, 30V, 9A, Powerpak 1212-8, Full Reel; Channel Type Vishay | Mosfet, N-Ch, 30V, 9A, Powerpak 1212 Rohs Compliant Vishay | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||
| IDSS | 9000 milliamps | 9000 milliamps | |||||||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts |
