POWER, FET, Product overview: SIRC18DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIRC18DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 60A PPAK SO-8
N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1277658-SIRC18DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Schottky Diode (Body)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 54.3W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 71 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIRC18DP-T1-GE3DKR,S
Base Product Number: SIRC18
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 30V 60A PPAK SO-8
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIRC18DP-T1-GE3 | SIRC18DP-T1-GE3 | SIRC18DP-T1-GE3TR-ND | 1277658-SIRC18DP-T1-GE3 | SIRC18DP-T1-GE3 | SIRC18DP-T1-GE3 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 60000 milliamps |
